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The NX-HB-GAN3R2-BSC half-bridge evaluation board provides the elements of a simple buck
or boost converter. This enables the basic study of the switching characteristics and
efficiency achievable with Nexperia’s 100V E-Mode GaN FETs. The circuit is configured for
synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single
logic input or separate high / low level inputs. The voltage input and output can operate at up to
60 VDC, with a power output > 350 W
Key features & benefits
- The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance.
- Enhancement mode - normally-off power switch
- Ultra high frequency switching capability
- No body diode
- Low gate charge, low output charge
Software and tools
Key applications
- High power density and high efficiency power conversion
- AC-to-DC converters, (secondary stage)
- High frequency DC-to-DC converters in 48 V systems
- Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
- Datacom and telecom (AC-to-DC and DC-to-DC) converters
- Motor drives
- LiDAR (non-automotive)
- Class D audio amplifiers
Products on the board (7)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
GAN3R2-100CBE | 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) | Production | |
|
PBSS4041NZ | 60 V, 7 A NPN low VCEsat transistor | Production | |
|
PMEG2020EJ | 20 V, 2 A very low VF Schottky barrier rectifier | Production | |
|
74LVC2G86DC | Dual 2-input EXCLUSIVE-OR gate | Production | |
|
1PS76SB40 | General-purpose Schottky diode | Production | |
|
|
BAS316 | High-speed switching diode | Production | |
|
|
BZX384-B56 | Voltage regulator diodes | Production |
Products on the board (7)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
|
GAN3R2-100CBE | 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) | Production | |
|
|
PBSS4041NZ | 60 V, 7 A NPN low VCEsat transistor | Production | |
|
|
PMEG2020EJ | 20 V, 2 A very low VF Schottky barrier rectifier | Production | |
|
|
74LVC2G86DC | Dual 2-input EXCLUSIVE-OR gate | Production | |
|
|
1PS76SB40 | General-purpose Schottky diode | Production | |
|
|
BAS316 | High-speed switching diode | Production | |
|
|
BZX384-B56 | Voltage regulator diodes | Production |
Documentation (2)
| File name | Title | Type | Date |
|---|---|---|---|
| GaNFET_evaluation_board_Terms_Of_Use | GaN FET EVALUATION BOARD TERMS OF USE | Other type | 2023-10-10 |
| UM90038 | NX-HB-GAN3R2-BSC half-bridge evaluation board | User manual | 2024-06-27 |