双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package

The NX-DP-GAN039-TSC double pulse evaluation board enables double-pulse testing of GaN FETs in a top-side cooled copper-clip package (CCPAK). It is optimized for low inductance and features a high-bandwidth current shunt that can be used to evaluate the switching performance with maximum precision. In addition, it can be used for thermal investigations and continuous operation of 5kW and beyond.

NX-DP-GAN039-TSC double pulse evaluation board

Key features & benefits

The Gallium Nitride FET GAN039-650NTB (33 mΩ RDS(on) typ.) used in this evaluation board is a normally-off device, comprised of a high-voltage depletion-mode GaN HEMT (High Electron Mobility Transistor) combined with a tailored 30 V Si-FET in a cascode configuration.It is assembled as a die-on-die stack for best performance and minimized internal parasitics, housed in a 12 mm x 12 mm top-side cooled copper-clip package CCPAK. 

Key features of GAN039-650NTB include: 

  • Very low switching losses 
  • Rugged gate with high threshold voltage, Vth = 4 V, enables single supply gate drive voltage 0 V to 10 - 12 V. 
  • Very good QGD/QGS << 1 ratio, protects against parasitic turn-on 
  • Minimal reverse-recovery 
  • Very low Rth in top-side cooling for SMD 
  • Best in class third-quadrant off-state conduction performance for wide-bandgap devices 
  • Very low package inductance (≈1.3 nH @ 100 MHz)

Key applications

Products on the board (3)

Type number Description Status Quick access
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Production
74LVC2G14GV Dual inverting Schmitt trigger with 5 V tolerant input Production
74LVC2G08DC Dual 2-input AND gate Production

Related boards (4)

Board Description Type Quick links Shop link
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) NX-HB-GAN041UL-GAN041-650WSB-half-bridge-evaluation-board Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) Evaluation board
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package NX-HB-GAN039-BSCUL-bottom-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package Evaluation board
4 kW analogue bridgeless totem-pole PFC evaluation board 4-kW-analogue-bridgeless-totem-pole-PFC-evaluation-board 4 kW analogue bridgeless totem-pole PFC evaluation board Evaluation board

Products on the board (3)

Type number Description Status Quick access
GAN039-650NTB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package Production
74LVC2G14GV Dual inverting Schmitt trigger with 5 V tolerant input Production
74LVC2G08DC Dual 2-input AND gate Production

Related boards (4)

Board Description Type Quick links Shop link
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) NX-HB-GAN041UL-GAN041-650WSB-half-bridge-evaluation-board Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) Evaluation board
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package NX-HB-GAN039-BSCUL-bottom-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package Evaluation board
4 kW analogue bridgeless totem-pole PFC evaluation board 4-kW-analogue-bridgeless-totem-pole-PFC-evaluation-board 4 kW analogue bridgeless totem-pole PFC evaluation board Evaluation board

Documentation (2)

File name Title Type Date
GaNFET_evaluation_board_Terms_Of_Use GaN FET EVALUATION BOARD TERMS OF USE Other type 2023-10-10
UM90028 NX-DP-GAN039-TSC double pulse evaluation board with top-side cooled CCPAK GaN FETs User manual 2024-01-09