双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74AUP1G885GF

Low-power dual function gate

The 74AUP1G885 is a dual function gate. The output state of the outputs (1Y, 2Y) is determined by the inputs (A, B and C). The output 1Y provides the Boolean function: 1Y = A × C. The output 2Y provides the Boolean function: 2Y = A × B + A × C.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

This product has been discontinued

Features and benefits

  • Wide supply voltage range from 0.8 V to 3.6 V

  • CMOS low power dissipation

  • High noise immunity

  • Low static power consumption; ICC = 0.9 µA (maximum)

  • Overvoltage tolerant inputs to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • IOFF circuitry provides partial Power-down mode operation

  • Latch-up performance exceeds 100 mA per JESD78 Class II

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

Parametrics

Type number Package name
74AUP1G885GF XSON8

PCB Symbol, Footprint and 3D Model

Model Name Description

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
74AUP1G885GF 74AUP1G885GF,115
(935291472115)
Withdrawn / End-of-life 58 SOT1089
XSON8
(SOT1089)
SOT1089 REFLOW_BG-BD-1
SOT1089_115

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
74AUP1G885GF 74AUP1G885GF,115 74AUP1G885GF rohs rhf rhf
Quality and reliability disclaimer

Documentation (12)

File name Title Type Date
74AUP1G885 Low-power dual function gate Data sheet 2024-08-12
AN11052 Pin FMEA for AUP family Application note 2019-01-09
Nexperia_document_guide_MiniLogic_MicroPak_201808 MicroPak leadless logic portfolio guide Brochure 2018-09-03
SOT1089 3D model for products with SOT1089 package Design support 2019-10-07
aup1g885 aup1g885 IBIS model IBIS model 2013-04-07
Nexperia_document_Logic_CombinationLogic_infocard_201710 Combination logic solutions card Leaflet 2019-08-09
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
XSON8_SOT1089_mk plastic, extremely thin small outline package; no leads; 8 terminals; 0.55 mm pitch; 1.35 mm x 1 mm x 0.5 mm body Marcom graphics 2017-01-28
SOT1089 plastic, leadless extremely thin small outline package; 8 terminals; 0.35 mm pitch; 1.35 mm x 1 mm x 0.5 mm body Package information 2022-06-03
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
MAR_SOT1089 MAR_SOT1089 Topmark Top marking 2013-06-03

Support

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Models

File name Title Type Date
aup1g885 aup1g885 IBIS model IBIS model 2013-04-07
SOT1089 3D model for products with SOT1089 package Design support 2019-10-07

PCB Symbol, Footprint and 3D Model

Model Name Description

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.