双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74CBTLV3257DS-Q100

Quad 1-of-2 multiplexer/demultiplexer

The 74CBTLV3257-Q100 provides a quad 1-of-2 high-speed multiplexer/demultiplexer with common select (S) and output enable (OE) inputs. The low ON resistance of the switch allows inputs to be connected to outputs without adding propagation delay or generating additional ground bounce noise. When pin OE = LOW, one of the two switches is selected (low-impedance ON-state) with pin S. When pin OE = HIGH, all switches are in the high-impedance OFF-state, independent of pin S. To ensure the high-impedance OFF-state during power-up or power-down, OE should be tied to the VCC through a pull-up resistor. The current-sinking capability of the driver determines the minimum value of the resistor.

Schmitt trigger action at control input, makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 2.3 V to 3.6 V.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

This product has been discontinued

Features and benefits

  • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

    • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

  • Supply voltage range from 2.3 V to 3.6 V

  • High noise immunity

  • Complies with JEDEC standard:

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8-B/JESD36 (2.7 V to 3.6 V)

  • 5 Ω switch connection between two ports

  • Rail to rail switching on data I/O ports

  • CMOS low power consumption

  • Latch-up performance exceeds 250 mA per JESD78B Class I level A

  • IOFF circuitry provides partial Power-down mode operation

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • DHVQFN package with Side-Wettable Flanks enabling Automatic Optical Inspection (AOI) of solder joints

Parametrics

Type number Package name
74CBTLV3257DS-Q100 SSOP16

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
74CBTLV3257DS-Q100 74CBTLV3257DS-Q10J
(935302228118)
Obsolete TLV3257 SOT519-1
SSOP16
(SOT519-1)
SOT519-1 SSOP-TSSOP-VSO-REFLOW
SSOP-TSSOP-VSO-WAVE
SOT519-1_118

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
74CBTLV3257DS-Q100 74CBTLV3257DS-Q10J 74CBTLV3257DS-Q100 rohs rhf rhf
Quality and reliability disclaimer

Documentation (6)

File name Title Type Date
SOT519-1 3D model for products with SOT519-1 package Design support 2023-02-07
cbtlv3257 IBIS model of 74CBTLV3257 IBIS model 2017-12-11
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT519-1 plastic, shrink small outline package; 16 leads; 0.635 mm pitch; 4.9 mm x 3.9 mm x 1.73 mm body Package information 2022-06-20
SSOP-TSSOP-VSO-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
cbtlv3257 IBIS model of 74CBTLV3257 IBIS model 2017-12-11
SOT519-1 3D model for products with SOT519-1 package Design support 2023-02-07

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.