双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

BSH207

P-channel vertical D-MOS logic level FET

Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

This product has been discontinued

Features and benefits

  • Saves PCB space due to small footprint
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for logic level gate drive sources
  • Suitable for very low gate drive sources voltage

Applications

  • battery powered applications
  • High-speed digital interfaces

Parametrics

Type number Product status Release date
BSH207 End of life 2011-01-24

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
BSH207 BSH207,135
(934055227135)
Obsolete no package information

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
BSH207 BSH207,135 BSH207 rohs rhf rhf
Quality and reliability disclaimer

Documentation (11)

File name Title Type Date
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
BSH207 BSH207 SPICE model SPICE model 2012-06-08
BSH207_30_05_2012 BSH207 Spice model SPICE model 2013-12-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
BSH207 BSH207 SPICE model SPICE model 2012-06-08
BSH207_30_05_2012 BSH207 Spice model SPICE model 2013-12-13

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.