双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

GAN039-650NBB

650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

The GAN039-650NBB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Features and benefits

  • Simplified driver design as standard level MOSFET gate drivers can be used:
    • 0 V to 12 V drive voltage

    • Gate threshold voltage VGSth of 4 V

  • Robust gate oxide with ±20 V VGS rating

  • High gate threshold voltage of 4 V for gate bounce immunity

  • Low body diode Vf for reduced losses and simplified dead-time adjustments

  • Transient over-voltage capability for increased robustness

  • CCPAK package technology:
    • Improved reliability, with reduced Rth(j-mb) for optimal cooling

    • Lower inductances for lower switching losses and EMI

    • 150 °C maximum junction temperature

    • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages

    • Visual (AOI) soldering inspection, no need for expensive x-ray equipment

    • Easy solder wetting for good mechanical solder joints

Applications

  • Hard and soft switching converters for industrial and datacom power

  • Bridgeless totempole PFC

  • PV and UPS inverters

  • Servo motor drives

Parametrics

Type number Package version Package name Product status Configuration Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
GAN039-650NBB SOT8000 CCPAK1212 Production cascode N 1 650 39 150 58.5 5 26 250 187 3.9 N 1980 144 2020-07-30

Package

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
GAN039-650NBB GAN039-650NBBHP
(934662151128)
Active 039INBB SOT8000
CCPAK1212
(SOT8000)
SOT8000 Not available

Boards

Part number Description Type Quick links Shop link
Description
The H-bridge circuit is a full bridge DC-to-DC converter allowing operation of a brushed DC motor (48 V max, 12 V min, 5 A max). The control circuit operates with input voltages from 12 - 48 V for motors up to 250 W. The key feature of this design is that all electronic functions are designed with automotive qualified Nexperia discretes, MOSFETs and logic components (cost-effective, no microcontroller or software needed). In addition this H-bridge motor controller PCB allows the user to choose between three Nexperia MOSFET package options (LFPAK33, LFPAK56D or LFPAK56).
Type
Reference design
Quick links
Shop link
Description
The NX-HB-GAN039-BSCUL bottom-side cooled half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 KW or more, dependent upon cooling, ambient temperature and switching frequency. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.
Type
Evaluation board
Quick links
Shop link

Environmental information

Type number Orderable part number Chemical content RoHS RHF-indicator
GAN039-650NBB GAN039-650NBBHP GAN039-650NBB rohs rhf
Quality and reliability disclaimer

Documentation (16)

File name Title Type Date
GAN039-650NBB 650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package Data sheet 2024-05-28
AN90004 Probing considerations for fast switching applications Application note 2019-11-15
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
AN90006 Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
AN90030 Paralleling of Nexperia cascode GaN FETs in half-bridge topology Application note 2023-03-22
AN90030_translated ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 Application note 2023-04-03
AN90053 Advanced SPICE models for Nexperia cascode Gallium Nitride (GaN) FETs Application note 2024-05-31
SOT8000 3D model for products with SOT8000 package Design support 2023-02-07
SOT8000 Plastic, surface mounted copper clip package (CCPAK1212);13 terminals; 2.0 mm pitch, 12 mm x 9.4 mm x 2.5 mm body Package information 2024-04-18
GAN039-650NxB_models_LTspice GAN039-650NxB LTspice model SPICE model 2023-11-28
GAN039-650NxB_models_SIMetrix GAN039-650NxB SIMetrix SPICE model SPICE model 2023-11-28
TN90004 An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21
UM90007 NX-HB-GAN039-BSCUL 3.5 kW half-bridge evaluation board with bottom-side cooled GaN FETs User manual 2024-08-21
nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN 白皮书: 功率GaN技术: 高效功率转换的需求 White paper 2020-08-17
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
GAN039-650NxB_models_LTspice GAN039-650NxB LTspice model SPICE model 2023-11-28
GAN039-650NxB_models_SIMetrix GAN039-650NxB SIMetrix SPICE model SPICE model 2023-11-28
SOT8000 3D model for products with SOT8000 package Design support 2023-02-07

Ordering, pricing & availability

Type number Orderable part number Ordering code (12NC) Status Packing Packing Quantity Buy online
GAN039-650NBB GAN039-650NBBHP 934662151128 Active Not available 1,000 Order product

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
GAN039-650NBB GAN039-650NBBHP 934662151128 SOT8000 Order product