Orderable parts
| Type number | Orderable part number | Ordering code (12NC) | Package | Buy from distributors |
|---|---|---|---|---|
| GAN041-650WSB | GAN041-650WSBQ | 934661752127 | SOT429-3 | Order product |
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Click here for more informationGAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Features and benefits
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability
Applications
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
Parametrics
| Type number | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN041-650WSB | SOT429-3 | TO-247-3L | Production | cascode | N | 1 | 650 | 41 | 175 | 47.2 | 6.6 | 22 | 187 | 150 | 3.9 | N | 1500 | 147 | 2020-05-14 |
Package
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| GAN041-650WSB | GAN041-650WSBQ (934661752127) |
Active | GAN041 650WSB |
TO-247-3L (SOT429-3) |
SOT429-3 | Not available |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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Description The NX-HB-GAN041UL GAN041-650WSB half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 kW. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.
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Type Evaluation board
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Quick links
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Shop link
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Environmental information
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| GAN041-650WSB | GAN041-650WSBQ | GAN041-650WSB |
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Series
Documentation (18)
| File name | Title | Type | Date |
|---|---|---|---|
| GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Data sheet | 2024-06-04 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
| AN90030_translated | ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 | Application note | 2023-04-03 |
| TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
| SOT429-3 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2023-12-07 |
| GAN041_650WSB | GAN041-650WSB SPICE model | SPICE model | 2021-03-24 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| GaN041-650WSB | GaN041-650WSB Foster thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_RC_Thermal_Model | GaN041-650WSB RC thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_cauer | GaN041-650WSB Cauer thermal model | Thermal model | 2021-03-25 |
| UM90010 | NX-HB-GAN041UL 3.5 kW Half-Bridge evaluation board using GAN041-650WSB | User manual | 2023-10-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
Support
If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.
Models
| File name | Title | Type | Date |
|---|---|---|---|
| GAN041_650WSB | GAN041-650WSB SPICE model | SPICE model | 2021-03-24 |
| GaN041-650WSB | GaN041-650WSB Foster thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_RC_Thermal_Model | GaN041-650WSB RC thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_cauer | GaN041-650WSB Cauer thermal model | Thermal model | 2021-03-25 |
Ordering, pricing & availability
| Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
|---|---|---|---|---|---|---|
| GAN041-650WSB | GAN041-650WSBQ | 934661752127 | Active | Not available | 300 | Order product |
Sample
As a Nexperia customer you can order samples via our sales organization.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
Buy from Nexperia
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