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Orderable parts
| Type number | Orderable part number | Ordering code (12NC) | Package | Buy from distributors |
|---|---|---|---|---|
| GAN3R2-100CBE | GAN3R2-100CBEAZ | 934665899341 | WLCSP8-SOT8072 | Order product |
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Click here for more informationGAN3R2-100CBE
100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)
The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance.
Features and benefits
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Qualified for standard applications
ESD protection
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm
Applications
High power density and high efficiency power conversion
AC-to-DC converters, (secondary stage)
- High frequency DC-to-DC converters in 48 V systems
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
LiDAR (non-automotive)
Class D audio amplifiers
Parametrics
| Type number | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN3R2-100CBE | WLCSP8-SOT8072 | WLCSP8 | Production | e-mode | N | 1 | 100 | 3.2 | 150 | 1.7 | 394 | 1.1 | N | 1000 | 460 | 2023-02-22 |
Package
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| GAN3R2-100CBE | GAN3R2-100CBEAZ (934665899341) |
Active | 3R2DCBE |
WLCSP8 (WLCSP8-SOT8072) |
WLCSP8-SOT8072 | WLCSP8-SOT8072_341 |
Boards
| Part number | Description | Type | Quick links | Shop link |
|---|---|---|---|---|
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Description The NX-HB-GAN3R2-BSC half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s 100V E-Mode GaN FETs. The circuit is configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high / low level inputs. The voltage input and output can operate at up to 60 VDC, with a power output > 350 W
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Type Evaluation board
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Quick links
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Shop link
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Environmental information
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| GAN3R2-100CBE | GAN3R2-100CBEAZ | GAN3R2-100CBE |
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Documentation (22)
| File name | Title | Type | Date |
|---|---|---|---|
| GAN3R2-100CBE | 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) | Data sheet | 2023-04-27 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90041 | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
| WLCSP8-SOT8072 | 3D model for products with WLCSP8-SOT8072 package | Design support | 2023-04-13 |
| WLCSP8-SOT8072 | wafer level chip-scale package; 8 solder bars; body: 3.5 x 2.13 x 0.429 mm | Package information | 2023-03-21 |
| WLCSP8-SOT8072_341 | WLCSP8; Reel dry pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2023-04-18 |
| GAN3R2-100CBE | GAN3R2-100CBE SPICE model | SPICE model | 2023-04-12 |
| GAN3R2-100CBE_LTspice | GAN3R2-100CBE LTspice model | SPICE model | 2024-09-09 |
| GAN3R2-100CBE_SIMetrix | GAN3R2-100CBE SIMetrix SPICE model | SPICE model | 2024-09-09 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| CauerModel_GAN3R2-100CBE | Cauer model GAN3R2-100CBE | Thermal model | 2023-04-12 |
| FosterModel_GAN3R2-100CBE | Foster model GAN3R2-100CBE | Thermal model | 2023-04-12 |
| GAN3R2-100CBE | GAN3R2-100CBE RC thermal model | Thermal model | 2023-04-12 |
| GAN3R2-100CBE_Cauer | GAN3R2-100CBE Cauer model | Thermal model | 2023-04-12 |
| GAN3R2-100CBE_Foster | GAN3R2-100CB Foster model | Thermal model | 2023-04-12 |
| UM90038 | NX-HB-GAN3R2-BSC half-bridge evaluation board | User manual | 2024-06-27 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
Support
If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.
Models
| File name | Title | Type | Date |
|---|---|---|---|
| WLCSP8-SOT8072 | 3D model for products with WLCSP8-SOT8072 package | Design support | 2023-04-13 |
| GAN3R2-100CBE | GAN3R2-100CBE SPICE model | SPICE model | 2023-04-12 |
| GAN3R2-100CBE_LTspice | GAN3R2-100CBE LTspice model | SPICE model | 2024-09-09 |
| GAN3R2-100CBE_SIMetrix | GAN3R2-100CBE SIMetrix SPICE model | SPICE model | 2024-09-09 |
| CauerModel_GAN3R2-100CBE | Cauer model GAN3R2-100CBE | Thermal model | 2023-04-12 |
| FosterModel_GAN3R2-100CBE | Foster model GAN3R2-100CBE | Thermal model | 2023-04-12 |
| GAN3R2-100CBE | GAN3R2-100CBE RC thermal model | Thermal model | 2023-04-12 |
| GAN3R2-100CBE_Cauer | GAN3R2-100CBE Cauer model | Thermal model | 2023-04-12 |
| GAN3R2-100CBE_Foster | GAN3R2-100CB Foster model | Thermal model | 2023-04-12 |
Ordering, pricing & availability
| Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
|---|---|---|---|---|---|---|
| GAN3R2-100CBE | GAN3R2-100CBEAZ | 934665899341 | Active | WLCSP8-SOT8072_341 | 1,500 | Order product |
Sample
As a Nexperia customer you can order samples via our sales organization.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GAN3R2-100CBE
100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)
Buy from Nexperia
| SKU | Stock* | MOQ | Price per unit | Quantity |
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