双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

GANB012-040CBA

40 V, 12 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.2 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP)

The GANB012-040CBA is a 40 V, 12 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering superior performance.

Features and benefits

  • Enhancement mode - normally-off power switch

  • Bi-directional device

  • Ultra high switching speed capability

  • Ultra-low on-state resistance

  • RoHS, Pb-free, REACH-compliant

  • High efficiency and high power density

  • Wafer Level Chip-Scale Package (WLCSP) 1.2 mm x 1.7 mm

Applications

  • High-side load switch

  • OVP protection in smart phone USB port

  • DC-to-DC converters

  • Power switch circuits

  • Stand-by power system

Parametrics

Type number Package version Package name Product status Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) Ptot [max] (W) VGSth [typ] (V) Ciss [typ] (pF) Coss [typ] (pF) Release date
GANB012-040CBA WLCSP12_SOT8088 WLCSP12 Production 1 40 12 125 10 1.9 11 1.35 405 174 2024-04-03

Package

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
GANB012-040CBA GANB012-040CBAZ
(934667632336)		 Active 012ACBA WLCSP12_SOT8088
WLCSP12
(WLCSP12_SOT8088) 		WLCSP12_SOT8088 WLCSP12_SOT8088_336

Environmental information

Type number Orderable part number Chemical content RoHS RHF-indicator
GANB012-040CBA GANB012-040CBAZ GANB012-040CBA rohs rhf rhf
Quality and reliability disclaimer

Documentation (5)

File name Title Type Date
GANB012-040CBA 40 V, 12 mOhm bi-directional Gallium Nitride (GaN) FET in a 1.2 mm x 1.7 mm Wafer Level Chip-Scale Package (WLCSP) Data sheet 2025-03-12
AN90004 Probing considerations for fast switching applications Application note 2019-11-15
AN90041 Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs Application note 2023-05-09
WLCSP12_SOT8088 WLCSP12: wafer level chip-size package; 12 bumps (4 x 3) Package information 2025-01-16
WLCSP12_SOT8088_336 WLCSP12; Reel dry pack for SMD, 7"; Q1/T1 product orientation Packing information 2024-03-28

Support

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Models

No documents available

Ordering, pricing & availability

Type number Orderable part number Ordering code (12NC) Status Packing Packing Quantity Buy online
GANB012-040CBA GANB012-040CBAZ 934667632336 Active WLCSP12_SOT8088_336 2,500 Order product

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
GANB012-040CBA GANB012-040CBAZ 934667632336 WLCSP12_SOT8088 Order product