双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PBSS2515E

15 V, 0.5 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS3515E.

This product has been discontinued

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • AEC-Q101 qualified

Applications

  • DC-to-DC conversion
  • MOSFET gate driving
  • Motor control
  • Charging circuits
  • Low power switches (e.g. motors, fans)
  • Portable applications

Parametrics

Type number Package version Package name Size (mm) channel type (e) Ptot (mW) VCEO [max] (V) IC [max] (mA) hFE [min] fT [min] (MHz) Automotive qualified
PBSS2515E SOT416 SC-75 1.6 x 0.75 x 0.9 NPN 150.0 15.0 500.0 200.0 250.0 N

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PBSS2515E PBSS2515E/DG,115
(934061913115)		 Obsolete SOT416
SC-75
(SOT416) 		SOT416 SOT416_115

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PBSS2515E PBSS2515E/DG,115 PBSS2515E rohs rhf rhf
Quality and reliability disclaimer

Documentation (5)

File name Title Type Date
PBSS2515E 15 V, 0.5 A NPN low VCEsat (BISS) transistor Data sheet 2009-04-26
AN11076 Thermal behavior of small-signal discretes on multilayer PCBs Application note 2021-06-23
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
PBSS2515E PBSS2515E SPICE model SPICE model 2024-08-27

Support

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Models

File name Title Type Date
PBSS2515E PBSS2515E SPICE model SPICE model 2024-08-27

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet