双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PHC21025

Complementary intermediate level FET

Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

This product has been discontinued

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Suitable for high frequency applications due to fast switching characteristics

Applications

  • Motor and actuator drivers
  • Power management
  • Synchronized rectification

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PHC21025 SOT96-1 SO8 End of life N/P 2 30 100 400 150 2.5 10 2 N 250 140 2011-01-18

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PHC21025 PHC21025,118
(934034320118)		 Obsolete SOT96-1
SO8
(SOT96-1) 		SOT96-1 SO-SOJ-REFLOW
SO-SOJ-WAVE
WAVE_BG-BD-1
SOT96-1_118

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PHC21025 PHC21025,118 PHC21025 rohs rhf rhf
Quality and reliability disclaimer

Documentation (19)

File name Title Type Date
PHC21025 Complementary intermediate level FET Data sheet 2017-06-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SO8_SOT96-1_mk plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body Marcom graphics 2017-01-28
SOT96-1 plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body Package information 2020-04-21
SO-SOJ-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
PHC21025N PHC21025N SPICE model SPICE model 2012-06-08
PHC21025P PHC21025P SPICE model SPICE model 2012-06-08
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
SO-SOJ-WAVE Footprint for wave soldering Wave soldering 2009-10-08
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PHC21025N PHC21025N SPICE model SPICE model 2012-06-08
PHC21025P PHC21025P SPICE model SPICE model 2012-06-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet