双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

单/双开关晶体管

VCEO高达60 V,IC高达800 mA

我们的NPN和PNP开关晶体管的存储时间更短,开关次数也大幅减少,为您带来设计优势。您可以从众多产品组合中进行选择,器件采用多种封装选项,包括小型和超小型封装。非常适合逻辑电平转换器以及通用开关。

主要特性和优势

  • 存储时间短
  • 小型和超小型封装
  • VCEO最高可达40 V(NPN型)或- 60 V(PNP型)
  • IC范围最高可达800 mA

关键应用

  • 通用开关
  • 逻辑电平转换器

Parametric search

Switching transistors single/double
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Products

Type number Description Status Quick access
PMBT2227AYS-Q 40 V, 600 mA, NPN/PNP double switching transistor Production
BSV52 NPN switching transistor Production
MMBT2222A NPN switching transistor Production
MMBT3906-Q 40 V, 200 mA PNP switching transistor Production
PMBT2369 NPN switching transistor Production
PMBT4401-Q 40 V, 600 mA NPN switching transistor Production
PMSS3906 PNP switching transistor Production
PMST2369 NPN switching transistor Production
PMST2222A NPN switching transistors Production
PMST2222 NPN switching transistors Production
PMST3904-Q NPN switching transistor Production
PMST3906 40 V, 200 mA PNP switching transistor Production
PMST4401-Q NPN switching transistor Production
PXT4401 NPN switching transistor Production
PXT4403 PNP switching transistor Production
PZT2222A NPN switching transistor Production
PZT2907A PNP switching transistor Production
PZT4401 NPN switching transistor Production
PZT4403-Q 40 V, 600 mA PNP switching transistor Production
Visit our documentation center for all documentation

Marcom graphics (1)

File name Title Type Date
SOT23_mk.png plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Marcom graphics 2017-01-28

Selection guide (1)

File name Title Type Date
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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Cross reference