双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

双低VCEsat (BISS)功率晶体管

使您的设计保持最低功耗和发热

我们的‘突破性小信号’(BISS)晶体管名副其实,在提供最优电源性能的同时节省空间。这些低VCEsat器件与采用同样封装的标准晶体管相比,功率耗损更低, 能效更高。它们的灵活性更高,可帮助简化电路布局,且采用更小型的封装,为您节省宝贵的PCB空间。

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Low VCEsat (BISS) power transistors double
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Products

Type number Description Status Quick access
LFPAK bipolar transistors Nexperia bipolar transistors in LFPAK56 and LFPAK56D - the true power packages for smart efficiency ACT
PHPT610030NK-Q NPN/NPN high power double bipolar transistor Production
PHPT610030NPK NPN/PNP high power double bipolar transistor Production
PHPT610030PK-Q PNP/PNP high power double bipolar transistor Production
PHPT610035NK NPN/NPN high power double bipolar transistor Production
PHPT610035PK PNP/PNP matched high power double bipolar transistor Production
PHPT610030NPK-Q NPN/PNP high power double bipolar transistor Production
PHPT610035NK-Q NPN/NPN high power double bipolar transistor Production
PHPT610035PK-Q PNP/PNP matched high power double bipolar transistor Production
Visit our documentation center for all documentation

Marcom graphics (1)

File name Title Type Date
LFPAK56D_SOT1205_mk.png plastic, single ended surface mounted package (LFPAK56D); 8 leads; 1.27 mm pitch; 4.7 mm x 5.3 mm x 1.05 mm body Marcom graphics 2017-01-28

Selection guide (1)

File name Title Type Date
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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Cross reference