双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

单低VCEsat (BISS)功率晶体管

使您的设计保持最低功耗和发热

我们的‘突破性小信号’(BISS)晶体管名副其实，在提供最优电源性能的同时节省空间。这些低VCEsat器件与采用同样封装的标准晶体管相比，功率耗损更低， 能效更高。它们的灵活性更高，可帮助简化电路布局，且采用更小型的封装，为您节省宝贵的PCB空间。

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Low VCEsat (BISS) power transistors single
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Products

Type number Description Status Quick access
LFPAK bipolar transistors Nexperia bipolar transistors in LFPAK56 and LFPAK56D - the true power packages for smart efficiency ACT
PHPT60406NY 40 V, 6 A NPN high power bipolar transistor Production
PHPT60406PY 40 V, 6 A PNP high power bipolar transistor Production
PHPT60410NY 40 V, 10 A NPN high power bipolar transistor Production
PHPT60410PY 40 V, 10 A PNP high power bipolar transistor Production
PHPT60415NY 40 V, 15 A NPN high power bipolar transistor Production
PHPT60415PY 40 V, 15 A PNP high power bipolar transistor Production
PHPT60603NY 60V, 3 A NPN high power bipolar transistor Production
PHPT60603PY 60 V, 3 A PNP high power bipolar transistor Production
PHPT60606NY 60 V, 6 A NPN high power bipolar transistor Production
PHPT60606PY 60 V, 6 A PNP high power bipolar transistor Production
PHPT60610NY 60 V, 10 A NPN high power bipolar transistor Production
PHPT60610PY 60 V, 10 A PNP high power bipolar transistor Production
PHPT61003PY 100 V, 3A PNP high power bipolar transistor Production
PHPT61006PY 100 V, 6 A PNP high power bipolar transistor Production
PHPT61010PY 100 V, 10 A PNP high power bipolar transistor Production
PBSS4620PA-Q 20 V, 6 A NPN low VCEsat transistor Production
PBSS5540Z-Q 40 V low VCEsat PNP transistor Production
PHPT60406NY-Q 40 V, 6 A NPN high power bipolar transistor Production
PHPT60406PY-Q 40 V, 6 A PNP high power bipolar transistor Production
PHPT60410NY-Q 40 V, 10 A NPN high power bipolar transistor Production
PHPT60410PY-Q 40 V, 10 A PNP high power bipolar transistor Production
PHPT60415NY-Q 40 V, 15 A NPN high power bipolar transistor Production
PHPT60415PY-Q 40 V, 15 A PNP high power bipolar transistor Production
PHPT60603NY-Q 60 V, 3 A NPN high power bipolar transistor Production
PHPT60603PY-Q 60 V, 3 A PNP high power bipolar transistor Production
PHPT60606NY-Q 60 V, 6 A NPN high power bipolar transistor Production
PHPT60606PY-Q 60 V, 6 A PNP high power bipolar transistor Production
PHPT60610NY-Q 60 V, 10 A NPN high power bipolar transistor Production
PHPT60610PY-Q 60 V, 10 A PNP high power bipolar transistor Production
PHPT61003NY-Q 100 V, 3 A NPN high power bipolar transistor Production
PHPT61006NY-Q 100 V, 6 A NPN high power bipolar transistor Production
PHPT61006PY-Q 100 V, 6 A PNP high power bipolar transistor Production
PHPT61010NY-Q 100 V, 10 A NPN high power bipolar transistor Production
PHPT61010PY-Q 100 V, 10 A PNP high power bipolar transistor Production
Visit our documentation center for all documentation

Marcom graphics (1)
File name Title Type Date
LFPAK56_POWER-SO8_SOT669_mk.png plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28

Selection guide (1)
File name Title Type Date
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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