双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

低VCEsat (BISS) RET

增强了BISS-RET组合的优势

RET是节省空间和成本的出色解决方案,可减少器件数量并简化电路设计。搭配BISS晶体管,您的设计还能受益于增强的性能,包括高集电极电流能力和高集电极电流增益。我们提供多种SMD和引脚封装供您选择。

主要特性和优势

  • ± 10%电阻比容差
  • 降低贴片成本
  • 内置偏置电阻
  • 减少器件数量
  • 100 mA、500 mA和最高800 mA的输出电流能力
  • 简化电路设计

关键应用

  • 控制IC输入
  • 数字系统
  • 开关负载

Parametric search

Low VCEsat (BISS) RETs
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Products

Type number Description Status Quick access
PBRN113ET-Q 40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ Production
PBRN113ZT-Q 40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 10 kΩ Production
PBRN123ET-Q 40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PBRN123YT-Q 40 V, 600 mA NPN PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ Production
PBRP113ET-Q 40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ Production
PBRP113ZT-Q 40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 10 kΩ Production
PBRP123ET-Q 40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PBRP123YT-Q 40 V, 600 mA PNP PB RET; R1 = 2.2 kΩ, R2 = 10 kΩ Production
Visit our documentation center for all documentation

Marcom graphics (1)

File name Title Type Date
SOT23_mk.png plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Marcom graphics 2017-01-28

Selection guide (1)

File name Title Type Date
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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Cross reference