双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

理想二极管

使用理想二极管将浪费的功耗降低10倍

理想二极管是由栅极调节放大器、功率MOSFET、保护电路、控制逻辑和诊断功能组成的集成电路。它们旨在模仿肖特基二极管的导通和阻断功能,同时显著降低正向压降、内部功耗和反向直流漏电流。

主要特性与优势

  • 适用于电源 OR-ing 应用的肖特基二极管的低功耗升级 
  • 自动切换 OR-ing 电源,确保负载供电的连续性
  • 正向压降减小10倍,提升下游负载的电压裕度
  • 反向偏置直流漏电流降低至原来的 1/100
  • 反向电压保护,防止敏感负载因极性反接受到破坏
  • 额定温度范围:-40℃至+125℃

关键应用

楼宇自动化
智能电表
OR-ed主电源和备用电池
汽车远程信息处理单元
物联网和消费电子产品的电池反向保护

Products

Type number Description Status Quick access
NID5100 1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode ACT
NID5100GW 1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode Production
NID5100-Q100 1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode ACT
NID5100GW-Q100 1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode Production
NID1100GV 1.5 V to 5.5 V, 1 A, ideal diode with forward voltage blocking Production
Visit our documentation center for all documentation

Data sheet (2)

File name Title Type Date
NID5100_Q100.pdf 1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode Data sheet 2024-07-26
NID5100.pdf 1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode Data sheet 2024-07-26

Leaflet (1)

File name Title Type Date
nexperia_leaflet_ideal-diode.pdf NID5100 Ideal Diode Leaflet 2024-08-09

Marcom graphics (1)

File name Title Type Date
SOT363-2_NID5100_mk.png plastic thin shrink small outline package; 6 leads; body width 1.25 mm Marcom graphics 2024-07-20

User manual (1)

File name Title Type Date
UM90040.pdf NID5100, 1.2 V to 5.5 V, 1.5 A input polarity protected, low quiescent current ideal diode evaluation board User manual 2024-07-25

Nexperia Explainers

NID5100 Power Up Insights

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Cross reference