双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

双低VCEsat (BISS)晶体管

要获得设计优势，请使用我们的双BISS

如果您的设计必须维持低功耗和减少发热，我们的低VCEsat (BISS)器件是理想的解决方案。这些器件具备高能效和高集电极电流特性（凭借创新的网状发射极技术）。

主要特性和优势

  • 更小电路板空间、更高性能
  • 高集电极电流增益hFE（高IC
  • 时）低集电极-发射极饱和电压VCEsat及相应的电阻RCEsat（最低<30 mΩ）
  • SOT89、SOT223、TO-126和DPAK等较大功率、中等功率晶体管的高性价比替代选择
  • 高集电极电流增益IC和ICM

关键应用

  • LAN和ADSL系统的电源开关/中等功率DC-DC转换
  • 反向器应用，如TFT显示屏
  • 中等功率外设驱动器，如风扇、马达
  • 电池充电器/负载开关
  • 适合数码相机与移动电话的频闪闪光灯

Parametric search

Low VCEsat (BISS) transistors double
Please wait loading data...
Parametric search is unavailable.

Products

Type number Description Status Quick access
PBSS5255PAPS-Q 55V, 2A PNP/PNP low VCEsat (BISS) double transistor Production
PBSS2515YPN-Q 15 V low VCEsat NPN/PNP transistor Production
PBSS4112PAN 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4160DPN 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4160DS-Q 60 V, 1 A NPN/NPN low VCEsat transistor Production
PBSS4160PANPS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4160PANS 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4220PANS 20 V, 2 A NPN/NPN low VCEsat BISS double transistor Production
PBSS4260PANP 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4260PANPS 60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor Production
PBSS4350SS 50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor EndOfLife
PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor EndOfLife
PBSS5220PAPS-Q 20V, 2 A PNP/PNP low VCEsat double transistor Production
PBSS4112PANP 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Production
PBSS5130PAP-Q 30 V, 1 A PNP/PNP low VCEsat transistor Production
PBSS5160DS-Q 60 V, 1 A PNP/PNP low VCEsat transistor Production
PBSS5160PAPS 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5160PAP 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor Production
PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor EndOfLife
PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4140DPN-Q 40 V low VCEsat NPN/PNP transistor Production
PBSS4160PANP-Q 60 V, 1 A NPN/PNP low VCEsat transistor Production
PBSS4160PAN 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4230PANP 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor Production
PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor Production
PBSS4260PANS-Q 60 V, 2 A NPN/NPN low VCEsat double transistor Production
PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor EndOfLife
PBSS5260PAP 60 V, 2 A PNP/PNP low V (BISS) transistor Production
PBSS5260PAPS 60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor Production
Visit our documentation center for all documentation

Marcom graphics (1)
File name Title Type Date
DFN2020D-6_SOT1118D_mk.png plastic, thermally enhanced ultra thin and small outline package; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Marcom graphics 2017-01-28

Selection guide (1)
File name Title Type Date
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

If you have a support question, let us know. If you are in need of design support, let us know and fill in the answer form, well get back to you shortly.

Or contact us for further support.


Cross reference