双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

空间受限电机的高IDS

Highest current capability up to 500A

高IDS、高热效、稳健性

如今,只要访问任何一家电动工具零售商店,您就会见证无绳产品市场的发展。现在,您可以找到电池供电的螺丝起子、电钻、锯子、砂光机、刨子、角磨机和许多其他工具——所有规格都可与电源供电版本相媲美。但是,要在小而紧凑的工具中实现这一水平的功率和效率可能会很有挑战性。Nexperia为电动工具电机控制创造了一个功率MOSFET产品组合,从而确保实现这一目标。

用于直流电机控制的ASFET——高IDS专为满足紧凑型电池供电工具的需求而设计:

  • ID(最大)——直径为500 µm的内部电线,具有多个接合点,采用LFPAK88封装时可提供高达400 A的电流,
    采用LFPAK56封装时可提供高达300 A的电流,采用TO-220封装时可提供高达150 A的电流,
    可实现电机的最大扭矩并可靠处理高负载和失速电流情况
  • LFPAK56行业领先的低Rth(j-mb)确保了即使在最紧凑的设计中,MOSFET结温也能保持在可控范围内
  • Nexperia的低导通电阻特性提供了更高的效率,确保了更长的电池使用寿命
  • 与所有电机应用一样,存在一定程度的系统振动,无法减弱。LFPAK具有独特的电路板级可靠性和稳健性。 
  • 许多器件以逻辑电平的方式提供,以便直接通过微控制器进行开关

Parametric search

High ID for motor overload conditions
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Products

Type number Description Status Quick access
PSMN1R0-40SSH N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMN1R0-40YLD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R0-40YSH N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Production
PSMNR51-25YLH N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR60-25YLH N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-40SSH N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMNR90-40YLH N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Production
Visit our documentation center for all documentation

Application note (2)

File name Title Type Date
AN90001.pdf Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28
AN90016.pdf Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03

Leaflet (2)

File name Title Type Date
nexperia_document_leaflet_LFPAK88_2022_CHN.pdf LFPAK88 将功率密度提升到新高度 Leaflet 2022-03-10
nexperia_document_leaflet_LFPAK88_2022.pdf LFPAK88 - Driving power-density to the next level Leaflet 2022-03-09

Selection guide (1)

File name Title Type Date
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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Cross reference