双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

低VCEsat (BISS)高压晶体管

采用BISS高压技术提升性能

我们最新的BISS（突破性小信号）高压晶体管系列具备更多的操作性优点，例如更低的导通电阻和更高的电流能力，帮助您预先应对不断增长的系统性能需求。多种封装和电压类型可供选择。

主要特性和优势

  • 高电压
  • 更低的导通电阻和更高的电流能力
  • 低集电极-发射极饱和电压VCEsat
  • 减少开关损耗
  • 高集电极电流能力IC和ICM
  • 高压MOSFET的低成本替代选择
  • 高集电极电流增益hFE（高IC
  • C时）将高压功能压缩成更小的PCB尺寸
  • 符合AEC-Q101标准

关键应用

  • 适用于LED链模块的LED驱动器
  • LCD背光
  • 汽车电机管理
  • 有线电信用挂钩开关
  • SMPS

Parametric search

Low VCEsat (BISS) high voltage transistors
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Products

Type number Description Status Quick access
PBHV2160Z-Q 600 V, 0.1 A NPN high-voltage low VCEsat transistor Production
PBHV3160Z-Q 600 V, 0.1 A PNP high-voltage low VCEsat transistor Production
PBHV8115T-Q 150 V, 1 A NPN high-voltage low VCEsat transistor Production
PBHV8115X-Q 150 V, 1 A NPN high-voltage low VCEsat transistor Production
PBHV8118T-Q 180 V, 1 A NPN high-voltage low VCEsat transistor Production
PBHV8215Z-Q 150 V, 2 A NPN high-voltage low VCEsat transistor Production
PBHV8540T-Q 500 V, 0.5 A NPN high-voltage low VCEsat transistor Production
PBHV8540X-Q 500 V, 0.5 A NPN high-voltage low VCEsat transistor Production
PBHV9050T-Q 500 V, 150 mA PNP high-voltage low VCEsat transistor Production
PBHV9414Z-Q 140 V, 4 A PNP high-voltage low VCEsat transistor Production
PBHV8115TLH-Q 150 V, 1 A NPN high-voltage low VCEsat transistor Production
PBHV8115Z-Q 150 V, 1 A NPN high-voltage low VCEsat transistor Production
PBHV8140Z-Q 500 V, 1 A NPN high-voltage low VCEsat transistor Production
PBHV8515QA 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor Production
PBHV8540Z-Q 500 V, 0.5 A NPN high-voltage low VCEsat transistor Production
PBHV9040T-Q 500 V, 0.25 A PNP high-voltage low VCEsat transistor Production
PBHV8550X 500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor Production
PBHV8560Z-Q 600 V, 0.5 A NPN high-voltage low VCEsat transistor Production
PBHV9040X-Q 500 V, 0.25 A PNP high-voltage low VCEsat transistor Production
PBHV9040Z-Q 500 V, 0.25 A PNP high-voltage low VCEsat transistor Production
PBHV9050Z-Q 500 V, 250 mA PNP high-voltage low VCEsat transistor Production
PBHV9115T-Q 150 V, 1 A PNP high-voltage low VCEsat transistor Production
PBHV9115TLH-Q 150 V, 1 A PNP high-voltage low VCEsat transistor Production
PBHV9115X-Q 150 V, 1 A PNP high-voltage low VCEsat transistor Production
PBHV9215Z-Q 150 V, 2 A PNP high-voltage low VCEsat transistor Production
PBHV9115Z-Q 150 V, 1 A PNP high-voltage low VCEsat transistor Production
PBHV9515QA 150 V, 500 mA PNP high-voltage low VCEsat (BISS) transistor EndOfLife
PBHV9540Z-Q 500 V, 0.5 A PNP high-voltage low VCEsat transistor Production
PBHV9540X-Q 400 V, 0.5 A PNP high-voltage low VCEsa transistor Production
PBHV9560Z-Q 600 V, 0.5 A PNP high-voltage low VCEsat transistor Production
Visit our documentation center for all documentation

Marcom graphics (1)
File name Title Type Date
SC-73_SOT223_mk.png plastic, surface-mounted package with increased heatsink; 4 leads; 4.6 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body Marcom graphics 2017-01-28

Selection guide (1)
File name Title Type Date
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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